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ALD Systems

Atomic Layer Deposition — Precision at the Nanoscale

Overview

Atomic-level thickness control, low-temperature deposition (RT–400°C), perfect conformality on high aspect ratio structures. Material systems include oxides (Al₂O₃, HfO₂, SiO₂, etc.), nitrides (TiN, AlN), and metals (Pt, Ru).

Key Features

  • Atomic-level thickness control
  • RT–400°C deposition
  • Perfect conformality
  • Thermal & PE-ALD modes

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