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PVD 溅射系统
多源磁控溅射，适用于金属、介质和化合物薄膜——从研发到生产规模。
查看详情DLC & TAC 涂层系统
类金刚石和四面体非晶碳——超高硬度、低摩擦、延长部件寿命。
查看详情ALD 原子层沉积系统
原子层沉积——纳米精度薄膜，完美的保形性。热式和等离子增强型。
查看详情磁控阴极
圆形、平面和旋转阴极——2英寸至12英寸——针对每种沉积几何形状和产能需求进行优化。
查看详情射频电源——13.56MHz
300W至3,000W的13.56MHz射频发生器，用于等离子工艺和薄膜沉积。
查看详情微波发生器——2.45GHz
固态和磁控管微波发生器，300W至6kW，用于先进等离子应用。
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post-oxidation-coating
OWLS-1800 is a metal-mode sputtering system devoted to "semiconductor optics". The wafer size is appropriate for up to 12 inches. The sputtering system can expand the scope of application (simultaneous double size coating, low temperature coating, etc.). Magnetron coating equipment based on post-oxidation processes is commonly adopted for the fabrication of ultra-hard thin films, such as diamond-like carbon (DLC) films. Such equipment generally integrates magnetron sputtering technology with post-oxidation processes. An oxidation step is implemented after film deposition to modify the microstructure and functional properties of thin films. KEY SYSTEM COMPONENTS - Magnetron Sputtering System: vacuum chamber, targets and magnetron sources. Magnetic fields boost sputtering efficiency and tailor the microstructure of deposited films. - Oxidation System: oxygen or other oxidizing gases are introduced; the post-oxidation step modulates the chemical composition and properties of thin films. - Substrate Pretreatment Unit: cleans and conditions substrate surfaces, guaranteeing strong adhesion and uniform coverage of thin films. - Auxiliary Control Systems: temperature regulation, gas pressure adjustment, sputtering power control and other parameters stabilize film deposition. - Ion Source: optional ion sources for post-deposition surface treatment to optimize thin-film performance. TECHNICAL SPECIFICATIONS - Vacuum Chamber: LL Room W820 x H1455 x D740 mm; TR Room W1070 x H480 x D1070 mm; PR Room W2540 x H745 x D2285 mm - Substrate Holder: 10 pcs (max 12 inch) - Rotary Substrate Drum System: 1800 mm x H48 mm, turntable type, 10 rpm ~ 100 rpm (tunable) - Reaction Source: ICP (inductively coupled plasma) - Sputtering Source: dual rotary cathode (planar type as option) - Evacuation System: roughing pump, turbo molecular pump, Meissner chiller - Ultimate Pressure: PR chamber <= 5.0 x 10-4 Pa - Pump Down Time: PR room 40 min (from atmospheric to 5.0 x 10-3 Pa) - Installation Space: 6500 mm (W) x 6000 mm (D) x 3400 mm (H) - Electricity: 3-phase + G, 380V +/- 5%, 125 kVA, 50/60 Hz - Min. Water Flow Rate: 195 L/min or greater - Air Pressure: 0.5 MPa - 0.7 MPa - Gross Weight: 13,500 kg approx.
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